| PART |
Description |
Maker |
| X2816ADI X2816ADI-35 X2816ADI-45 X2816ADM X2816ADM |
x8EEPROM
128Kx8 EEPROM
|
EEPROM
|
| CAT28C256P-25 CAT28C256PI-25 CAT28C256T13I-25 CAT2 |
128Kx8 EEPROM 128Kx8 EEPROM
x8EEPROM
|
Renesas Electronics, Corp.
Epson (China) Co., Ltd.
YEONHO Electronics Co., Ltd.
|
| PIC16F84AT-04I_PQTP PIC16F84AT-04I_PROM PIC16F84AT |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS Flash/EEPROM-based ...
18-pin Enhanced FLASH/EEPROM 8-bit Microcontroller
|
Microchip Technology
|
| WF128K32-50H1C5A WF128K32-50G2UC5 WF128K32-50G1TI5 |
EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC
EEPROM|FLASH|128KX32|CMOS|PGA|66PIN|CERAMIC
EEPROM EEPROM
|
Aeroflex, Inc.
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| HY229F800BT-55 HY29F800BT-55E HY29F800BT-55I HY229 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
EEPROM EEPROM
|
Hynix Semiconductor, Inc.
SIEMENS AG
AEGIS Semicondutores LTDA
|
| V29C51004B V29C51004T V29C51004T-70J V29C51004T-70 |
x8 Flash EEPROM x8闪存EEPROM
4 MEGABIT 524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
|
| LH28F160S3HB-L13 LH28F160S3R-L13 LH28F160S3HD-L13 |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS |专科| 56PIN |塑料
EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 56PIN |塑料
|
Sharp, Corp.
M.S. Kennedy, Corp.
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC
5 Volt Bulk Erase Flash Memory
From old datasheet system
|
intel
|
